The growth of diamond films on single crystal silicon by CVD has an attractive application prospect. One problem is how to improve the nucleation rate of diamond. Many methods are used to increase the nucleation rate, such as sanding the silicon surface with fine sandpaper and Si+ bombarding the silicon surface. Recently, the Super Diamond Film Laboratory of the City University of Hong Kong used low-energy carbon ions to bombard the surface of silicon crystals to improve the nucleation rate. Since carbon ions are formed by the ionization of methane, the carbon ion content of sp3 is increased, which is beneficial to the nucleation of diamond. In the study we first discovered a new type of diamond structure 9R diamond. Usually found in nature is cubic diamond, 3C diamond, and later a hexagonal diamond, also known as lansdaleite, was found in the meteorite. Later, people used XRD to find many diamond-like bodies, such as 2H, 4H, 6H, 8H, and 15R, 21R diamonds. For the first time, a research institute gave the HRTEM image of 9R diamond, and the arrangement structure of ABCBCACAB/ABCBCACAB/A... can be clearly seen. An HRTEM image of 2H diamond was also observed. The study also showed that these diamond nucleus Si substrates have a fixed orientation relationship, such as cubic to cubic, twin-like orientation. This is advantageous for the growth of diamond films in the future. Many diamond crystal nuclei are at the steps formed by the (001) plane and the (111) plane of the Si substrate.
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